October 28th, 2009
Intel, Numonyx claim memory breakthrough
Intel and Numonyx said Wednesday that they have found a way to stack phase change memory (PCM) arrays of on one die.
Phase change memory is a new non-volatile technology that features some of the best aspects of various memory types (think DRAM and Flash).
The companies said that the ability to stack PCM means that devices with more memory capacity, lower power consumption and space savings are possible. Numonyx is a flash memory specialist founded by Intel, STMicroelectronics and Francisco Partners.
According to Intel and Numonyx (statement), the companies will present its findings in a joint paper titled “A Stackable Cross Point Phase Change Memory.” The paper will be presented at the 2009 International Electron Devices Meeting in Baltimore, Md. on Dec. 9.
Also see: Samsung’s ‘melting’ memory chips could boost mobile phone battery life by 20%
Larry Dignan is Editor in Chief of ZDNet and Editorial Director of ZDNet sister site TechRepublic. See his full profile and disclosure of his industry affiliations.
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